Author Affiliations
Abstract
1 Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
2 College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
3 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
4 College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
5 Research Center for Functional Materials, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
6 State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
Monolayer group VI transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for photonic and opto-valleytronic applications. The optoelectronic properties of these atomically-thin semiconducting crystals are strongly governed by the tightly bound electron-hole pairs such as excitons and trions (charged excitons). The anomalous spin and valley configurations at the conduction band edges in monolayer WS2 give rise to even more fascinating valley many-body complexes. Here we find that the indirect Q valley in the first Brillouin zone of monolayer WS2plays a critical role in the formation of a new excitonic state, which has not been well studied. By employing a high-quality h-BN encapsulated WS2 field-effect transistor, we are able to switch the electron concentration within K-Q valleys at conduction band edges. Consequently, a distinct emission feature could be excited at the high electron doping region. Such feature has a competing population with the K valley trion, and experiences nonlinear power-law response and lifetime dynamics under doping. Our findings open up a new avenue for the study of valley many-body physics and quantum optics in semiconducting 2D materials, as well as provide a promising way of valley manipulation for next-generation entangled photonic devices.
2D materials WS2 charged excitons trions indirect Q-valley valleytronics 
Opto-Electronic Advances
2023, 6(4): 220034
Author Affiliations
Abstract
1 Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wroclaw, Poland
2 Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France
3 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
4 Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, Paris, France
This publisher’s note corrects the author name spelling in Photon. Res.8, A50 (2020)10.1364/PRJ.401872.
Photonics Research
2022, 10(10): 2447
Author Affiliations
Abstract
1 Beijing Academy of Quantum Information Sciences, Beijing, China
2 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
3 School of Materials Science and Engineering, Peking University, Beijing, China
4 Research Center for Wide Gap Semiconductor, Peking University, Beijing, China
5 Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China
6 Department of Physics, College of Physical Science and Technology, Xiamen University, Xiamen, China
7 CNR NANOTEC, Campus Ecotekne, Lecce, Italy
8 State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
9 Frontier Science Center for Quantum Information, Beijing, China
10 Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, China
The quest for realizing novel fundamental physical effects and practical applications in ambient conditions has led to tremendous interest in microcavity exciton polaritons working in the strong coupling regime at room temperature. In the past few decades, a wide range of novel semiconductor systems supporting robust exciton polaritons have emerged, which has led to the realization of various fascinating phenomena and practical applications. This paper aims to review recent theoretical and experimental developments of exciton polaritons operating at room temperature, and includes a comprehensive theoretical background, descriptions of intriguing phenomena observed in various physical systems, as well as accounts of optoelectronic applications. Specifically, an in-depth review of physical systems achieving room temperature exciton polaritons will be presented, including the early development of ZnO and GaN microcavities and other emerging systems such as organics, halide perovskite semiconductors, carbon nanotubes, and transition metal dichalcogenides. Finally, a perspective of outlooking future developments will be elaborated.
microcavity exciton polariton Bose–Einstein condensation exciton binding energy quantum simulation nonequilibrium dynamics 
Photonics Insights
2022, 1(1): R04
Author Affiliations
Abstract
1 Nanyang Technological University, School of Physical and Mathematical Sciences, Division of Physics and Applied Physics, Singapore
2 MajuLab, International Joint Research Unit UMI 3654, CNRS, Université Côte d’Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore
3 Tsinghua University, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Beijing, China
4 Beijing Academy of Quantum Information Sciences, Beijing, China
5 Tsinghua University, Beijing Innovation Center for Future Chips, Beijing, China
Optical parametric oscillators (OPOs) have been widely applied in spectroscopy, squeezed light, and correlated photons, as well as quantum information. Conventional OPOs usually suffer from a high power threshold limited by weak high-order nonlinearity in traditional pure photonic systems. Alternatively, polaritonic systems based on hybridized exciton–photon quasi-particles exhibit enhanced optical nonlinearity by dressing photons with excitons, ensuring highly nonlinear operations with low power consumption. We report an on-chip perovskite polariton parametric oscillator with a low threshold. Under the resonant excitation at a range of angles, the signal at the ground state is obtained, emerging from the polariton–polariton interactions at room temperature. Our results advocate a practical way toward integrated nonlinear polaritonic devices with low thresholds.
inorganic perovskite semiconductors exciton–polaritons parametric oscillators four-wave mixing 
Advanced Photonics
2021, 3(5): 055003
纳米激光概述下载:1802次
许嘉璐 1,2宁存政 1,2,*熊启华 3,4,**
作者单位
摘要
1 清华大学电子工程系, 北京 100084
2 清华大学国际纳米光电子学研究中心, 北京 100084
3 清华大学物理系低维量子物理国家重点实验室, 北京 100084
4 北京量子信息科学研究院, 北京 100193
自从第一个激光器诞生以来,激光对科学研究和技术应用都有革命性的影响。激光本身作为一门科学和技术兼具的学科,也一直是一个快速发展和极其活跃的研究前沿,激光器的线性尺寸从极小到极大跨越达10个数量级。主要介绍近十几年来激光向极小尺寸(即纳米激光)发展的一些基本情况,包括纳米激光发展的基本历史脉络和背景、各种不同的种类和特点、应用场景、目前发展状况、面临问题、未来趋势。不同种类的纳米激光器的主要区别在于激光腔和增益材料的不同,涉及的纳米腔结构包含纳米线状腔、回音壁式腔、Fabry-Pérot腔及金属等离子激元腔等;涉及的增益介质包括普通的化合物半导体和新兴钙钛矿、过渡金属硫族化合物等。
光电子学 半导体激光器 微腔器件 等离子体 纳米光子学及光子晶体 亚波长结构 半导体 
中国激光
2021, 48(15): 1501002
作者单位
摘要
1 School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Frontiers of Optoelectronics
2020, 13(3): 193
Author Affiliations
Abstract
1 Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
2 Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, F-75005 Paris, France
3 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
4 e-mail: Q_zhang@pku.edu.cn
5 e-mail: Carole.Diederichs@phys.ens.fr
6 e-mail: qihua@ntu.edu.sg
Halide perovskite semiconductors have emerged as promising candidates for the next-generation low-energy consumption, high-flexibility photonics and optoelectronic devices thanks to their superior optical and excitonic properties as well as fabrication convenience. This special issue, including three review papers and six original research papers, focuses on the studies of both fundamentals and applications of perovskite photonics, covering materials, excitonic properties, nonlinear optics, strong light–matter interactions, and optoelectronic devices.
Photonics Research
2020, 8(12): 12000PP1
Author Affiliations
Abstract
1 Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wroclaw, Poland
2 Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France
3 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
4 Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, Paris, France

High magnetic field spectroscopy has been performed on lead chloride-based perovskite, a material that attracts significant interest for photovoltaic and photonic applications within the past decades. Optical properties being mainly driven by the exciton states, we have measured the fundamental parameters, such as the exciton binding energy, effective mass, and dielectric constant. Among the inorganic halide perovskites, CsPbCl3 owns the largest exciton binding energy and effective mass. This blue emitting compound has also been compared with lower band gap energy perovskites and other semiconducting phases, showing comparable band gap dependences for binding energy and Bohr radius.

Photonics Research
2020, 8(10): A50

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